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| MPSA55 transistor (pnp) features power dissipation p cm: 0.625 w (tamb=25 ) collector current i cm : -0.5 a collector-base voltage v (br)cbo : -60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=-0.1ma, i b =0 -60 v collector-emitter breakdown voltage v (br)ceo ic=-1 ma, i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e =-0.1ma, i c =0 -4 v collector cut-off current i cbo v cb =-60 v, i e =0 -0.1 a collector cut-off current i ceo v ce =-60v, i c =0 -0.1 a dc current gain h fe v ce =-1v, i c =-100ma 100 collector-emitter saturation voltage v ce (sat) i c =-100 ma, i b =-10ma -0.25 v base-emitter saturation voltage v be v ce =-1v, i c =-100ma -1.2 v transition frequency f t v ce =-1v, i c =-100ma f=100mhz 50 mhz 1 2 3 to-92 1. emitter 2. base 3. collector MPSA55 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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